View MCP1470013_7003747.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

? 2009-2013 microchip technology inc. ds22201b-page 1 mcp14700 features: ? ideally suited to drive low figure-of-merit (fom) mosfets such as microchip?s mcp87000 mosfet family ? independent pwm input control for high-side and low-side gate drive ? input logic level threshold 3.0v ttl compatible ? dual output mosfet drive for synchronous applications ? high peak output current: 2a (typical) ? internal bootstrap blocking device ? +36v boot pin maximum rating ? low supply current: 45 a (typical) ? high capacitive load drive capability: - 3300 pf in 10.0 ns (typical) ? input voltage undervoltage lockout protection ? overtemperature protection ? space saving packages: - 8-lead soic - 8-lead 3x3 dfn applications: ? 3-phase bldc motor control ? high efficient synchronous dc/dc buck converters ? high-current low output voltage synchronous dc/dc buck converters ? high input voltage synchronous dc/dc buck converters ? core voltage supplies for microprocessors general description: the mcp14700 is a high-speed synchronous mosfet driver designed to optimally drive a high-side and low-side n-channel mosfet. it is particularly well suited for driving low-fom mosfets, including microchip?s mcp87000 family of high-speed mosfets. the mcp14700 has two pwm inputs to allow independent control of the external n-channel mosfets. since there is no internal cross conduction protection circuitry the external mosfet dead time can be tightly controlled allowing for more efficient systems or unique motor control algorithms. the transition thresholds for the pwm inputs are typically 1.6v on a rising pwm input signal and typically 1.2v on a falling pwm input signal. this makes the mcp14700 ideally suited for controllers that utilize 3.0v ttl/cmos logic. the pwm inputs are internally pulled low ensuring the output drive signals are low if the inputs are floating. the highdr and lowdr peak source current capability of the mcp14700 device is typically 2a. while the highdr can sink 2a peak typically, the lowdr can sink 3.5a peak typically. the low resistance pull-up and pull-down drive allow the mcp14700 to quickly transition a 3300 pf load in typically 10 ns. bootstrapping for the high-side drive is internally implemented which allows for a reduced system cost and design complexity. the mcp14700 features undervoltage lockout (uvlo) with a typical hysteresis of 500 mv. overtemperature protection with hysteresis is also featured on the device. package types mcp14700 3x3 dfn* pwm lo pwm hi gnd boot v cc 1 2 3 4 8 7 6 5 lowdr highdr phase * includes exposed thermal pad (ep); see ta b l e 3 - 1 . ep 9 mcp14700 soic pwm lo pwm hi gnd boot v cc 1 2 3 4 8 7 6 5 lowdr highdr phase dual input synchronous mosfet driver
mcp14700 ds22201b-page 2 ? 2009-2013 microchip technology inc. typical application schematic highdr lowdr phase v cc pwm lo boot gnd pwm hi v buck =12v v cc =5.0v c boot dspic33fj06gs101 current sense current sense pwm1l pwm1h an0 an1 mcp14700 synchronous buck application mcp87050 mcp87022 highdr lowdr phase v cc pwm lo boot gnd pwm hi highdr lowdr phase v cc pwm lo boot gnd pwm hi highdr lowdr phase v cc pwm lo boot gnd pwm h pwm2 pwm1 v cc pwm4 pwm3 v cc pwm6 pwm5 v cc 24v 24v 24v sense node v ref pwm1 pwm2 pwm3 pwm4 pwm5 pwm6 dspic ? mcp14700 mcp14700 sense node mcp14700 3-phase bldc motor control application sense node
? 2009-2013 microchip technology inc. ds22201b-page 3 mcp14700 functional block diagram boot highdr phase lowdr v cc pwm hi pwm lo gnd level shift input protection logic v cc circuitry circuitry gnd v cc
mcp14700 ds22201b-page 4 ? 2009-2013 microchip technology inc. notes:
? 2009-2013 microchip technology inc. ds22201b-page 5 mcp14700 1.0 electrical characteristics absolute maximum ratings ? v cc ........................................................ -0.3v to +7.0v v boot .................................................. -0.3v to +36.0v v phase ............................ v boot -7vtov boot +0.3v v pwm .............................................-0.3v to v cc +0.3v v highdr ......................v phase -0.3vtov boot +0.3v v lowdr .........................................-0.3v to v cc +0.3v esd protection on all pins .........................2 kv (hbm) ....................................................................400v (mm) ? notice: stresses above those listed under ?maximum ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specifica- tion is not intended. exposure to maximum rating con- ditions for extended periods may affect device reliability. dc characteristics electrical specifications: unless otherwise noted, v cc =5.0v, t j = -40c to +125c parameters sym. min. typ. max. units conditions v cc supply requirements v cc operating range v cc 4.5 5.0 5.5 v bias supply voltage i vcc ?45?apwm hi and pwm lo pin floating uvlo (rising v cc )v uvlo ? 3.50 4.00 v uvlo hysteresis v hys ?500?mv pwm input requirements pwm input current i pwm ?7.010av pwm =3.0v pwm input current i pwm ?1.0?nav pwm =0v pwm lo and pwm hi rising threshold pwm hi_th 1.40 1.60 1.80 v v cc =5.0v pwm lo and pwm hi falling threshold pwm lo_th 1.10 1.20 1.30 v v cc =5.0v pwm input hysteresis pwm hys ?400?mvv cc =5.0v output requirements high output voltage (highdr and lowdr) v oh v cc -0.025 ? ? v v cc =5.0v low output voltage (highdr and lowdr) v ol ??0.025vv cc =5.0v high drive source resistance r hi_src ?1.02.5 ? 500 ma source current, note 1 high drive sink resistance r hi_sink ?1.02.5 ? 500 ma sink current, note 1 high drive source current i hi_src ?2.0?a note 1 high drive sink current i hi_sink ?2.0?a note 1 low drive source resistance r lo_src ?1.02.5 ? 500 ma source current, note 1 low drive sink resistance r lo_sink ?0.51.0 ? 500 ma sink current, note 1 low drive source current i lo_src ?2.0?a note 1 low drive sink current i lo_sink ?3.5?a note 1 note 1: parameter ensured by characterization, not production tested. 2: see figure 4-1 and figure 4-2 for parameter definition.
mcp14700 ds22201b-page 6 ? 2009-2013 microchip technology inc. switching times highdr rise time t rh ?10?nsc l =3.3nf, note 1 , note 2 lowdr rise time t rl ?10?nsc l =3.3nf, note 1 , note 2 highdr fall time t fh ?10?nsc l =3.3nf, note 1 , note 2 lowdr fall time t fl ?6.0?nsc l =3.3nf, note 1 , note 2 highdr turn-off propagation delay t pdlh 20 27 36 ns no load, note 1 , note 2 lowdr turn-off propagation delay t pdll 10 17 25 ns no load, note 1 , note 2 highdr turn-on propagation delay t pdhh 20 27 36 ns no load, note 1 , note 2 lowdr turn-on propagation delay t pdhl 10 17 25 ns no load, note 1 , note 2 protection requirements thermal shutdown t shdn ?147?c note 1 thermal shutdown hysteresis t shdn_hys ?20?c note 1 dc characteristics (continued) electrical specifications: unless otherwise noted, v cc = 5.0v, t j = -40c to +125c parameters sym. min. typ. max. units conditions note 1: parameter ensured by characterization, not production tested. 2: see figure 4-1 and figure 4-2 for parameter definition. temperature characteristics unless otherwise noted, all parameters apply with v cc =5.0v parameter sym. min. typ. max. units comments temperature ranges maximum junction temperature t j ? ? +150 c storage temperature t a -65 ? +150 c specified temperature range t a -40 ? +125 c package thermal resistances thermal resistance, 8l-3x3 dfn ? ja ? 64 ? c/w typical four-layer board with vias to ground plane ? jc ?12?c/w thermal resistance, 8l-soic ? ja ?163?c/w ? jc ?42?c/w
? 2009-2013 microchip technology inc. ds22201b-page 7 mcp14700 2.0 typical performance curves note: unless otherwise indicated, t a =+25c with v cc =5.0v. figure 2-1: rise time vs. capacitive load. figure 2-2: highdr rise and fall time vs. temperature. figure 2-3: highdr propagation delay vs. temperature. figure 2-4: fall time vs. capacitive load. figure 2-5: lowdr rise and fall time vs. temperature. figure 2-6: lowdr propagation delay vs. temperature. note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 0 5 10 15 20 25 0 1500 3000 4500 6000 7500 capacitive load (pf) rise time (ns) t rl t rh 6 7 8 9 10 11 12 13 14 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature ( o c) time (ns) t rh t fh c load = 3,300 pf 20 22 24 26 28 30 32 34 36 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature ( o c) propagation delay (ns) t pdlh t pdhh c load = 3,300 pf 0 2 4 6 8 10 12 14 16 0 1500 3000 4500 6000 7500 capacitive load (pf) fall time (ns) t fl t fh 5 6 7 8 9 10 11 12 13 14 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature ( o c) time (ns) t rl t fl c load = 3,300 pf 10 12 14 16 18 20 22 24 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature ( o c) propagation delay (ns) t pdhl t pdll c load = 3,300 pf
mcp14700 ds22201b-page 8 ? 2009-2013 microchip technology inc. note: unless otherwise indicated, t a =+25c with v cc =5.0v. figure 2-7: supply current vs. frequency. figure 2-8: supply current vs. temperature. 0 10 20 30 40 50 60 70 100 1000 10000 frequency (khz) supply current (ma) c load = 3,300 pf 40 41 42 43 44 45 46 47 48 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature (c) supply current (a) pwm = 1 pwm = 0 c load = 3,300 pf
? 2009-2013 microchip technology inc. ds22201b-page 9 mcp14700 3.0 pin descriptions the descriptions of the pins are listed in tab l e 3 - 1 . 3.1 switch node (phase) the phase pin provides a return path for the high-side gate driver. the source of the high-side and the drain of the low-side power mosfets are connected to this pin. 3.2 high-side pwm control input signal (pwm hi ) the pwm input signal to control the high-side power mosfet is applied to the pwm hi pin. a logic high on the pwm hi pin causes the highdr pin to also transition high. 3.3 low-side pwm control input signal (pwm lo ) the pwm input signal to control the low-side power mosfet is applied to the pwm lo pin. a logic high on the pwm lo pin causes the lowdr pin to also transition high. 3.4 ground (gnd) the gnd pin provides ground for the mcp14700 circuitry. it should have a low-impedance connection to the bias supply source return. high peak currents will flow out the gnd pin when the low-side power mosfet is being turned off. 3.5 low-side gate drive (lowdr) the lowdr pin provides the gate drive signal to control the low-side power mosfet. the gate of the low-side power mosfet is connected to this pin. 3.6 supply input voltage (v cc ) the v cc pin provides bias to the mcp14700 device. a bypass capacitor is to be placed between this pin and the gnd pin. this capacitor should be placed as close to the mcp14700 as possible. 3.7 floating bootstrap supply (boot) the boot pin is the floating bootstrap supply pin for the high-side gate drive. a capacitor is connected between this pin and the phase pin to provide the necessary charge to turn on the high-side power mosfet. 3.8 high-side gate drive (highdr) the highdr pin provides the gate drive signal to control the high-side power mosfet. the gate of the high-side power mosfet is connected to this pin. 3.9 exposed metal pad (ep) the exposed metal pad of the dfn package is not internally connected to any potential. therefore, this pad can be connected to a ground plane or other copper plane on a printed circuit board to aid in heat removal from the package. table 3-1: pin function table mcp14700 symbol description 3x3 dfn soic 1 1 phase switch node 22pwm hi high-side pwm control input signal 33pwm lo low-side pwm control input signal 44gndground 5 5 lowdr low-side gate drive 66v cc supply input voltage 7 7 boot floating bootstrap supply 8 8 highdr high-side gate drive 9 ? ep exposed metal pad
mcp14700 ds22201b-page 10 ? 2009-2013 microchip technology inc. notes:
? 2009-2013 microchip technology inc. ds22201b-page 11 mcp14700 4.0 detailed description 4.1 device overview the mcp14700 is a synchronous mosfet driver with dual independent pwm inputs capable of controlling both a ground referenced and floating n-channel mosfet. the pwm input threshold levels are truly 3.0v logic tolerant and have 400 mv of typical hystereses making the mcp14700 ideal for use with low-voltage controllers. the mcp14700 is capable of suppling 2a (typical) peak current to the floating high-side mosfet that is connected to the highdr. with the exception of a capacitor, all of the circuitry needed to drive this high-side n-channel mosfet is internal to the mcp14700. a blocking device is placed between the v cc and boot pins that allows the bootstrap capacitor to be charged to v cc when the low-side power mosfet is conducting. refer to the application section, section 5.1 ?bootstrap capacitor select? , for information on determining the proper size of the bootstrap capacitor. the highdr is also capable of sinking 2a (typical) peak current. the lowdr is capable of sourcing 2a (typical) peak current and sinking 3.5a (typical) peak current. this helps ensure that the low-side mosfet stays turned off during the high dv/dt of the phase node. 4.2 pwm inputs a logic high on either pwm pin causes the corresponding output drive signal to be high. see figure 4-1 and figure 4-2 for a graphical representation of the mcp14700 operation. internally the pwm pins are pulled to ground to ensure there is no drive signal to the external mosfets if the pins are left floating. for reliable operation, it is recommended that the rising and falling slew rate of the pwm signal be faster than 1v/50 ns. when designing with the mcp14700 in applications where cross conduction of the external mosfets is not desired, care must be taken to ensure the pwm inputs have the proper timing. there is no internal cross conduction protection in the mcp14700. 4.3 under voltage lockout (uvlo) the uvlo feature of the mcp14700 does not allow the highdr or lowdr output to function when the input voltage, v cc , is below the uvlo threshold regardless of the state of the pwm hi and pwm lo pins. once v cc reaches the uvlo threshold, the highdr and lowdr outputs will respond to the state of the pwm hi or pwm lo pins. there is a 500 mv hystereses on the uvlo threshold. 4.4 overtemperature protection the mcp14700 is protected from an overtemperature condition by an internal thermal shutdown feature. when the internal temperature of the mcp14700 reaches 147c typically, the highdr and lowdr outputs will transition to a low state regardless of the state of the pwm hi or pwm lo pins. once the internal temperature is reduced by 20c typically, the mcp14700 will automatically respond to the states of the pwm hi and pwm lo pins. 4.5 timing diagram the pwm signal applied to the mcp14700 is supplied by a controller ic. the timing diagram in figure 4-1 graphically depicts the pwm signal and the output signals of the mcp14700. figure 4-1: mcp14700 lowdr timing diagram. pwm lo lowdr t pdhl t rl t pdll t fl
mcp14700 ds22201b-page 12 ? 2009-2013 microchip technology inc. figure 4-2: mcp14700 highdr timing diagram. pwm hi highdr t pdhh t rh t pdlh t fh
? 2009-2013 microchip technology inc. ds22201b-page 13 mcp14700 5.0 application information 5.1 bootstrap capacitor select the selection of the bootstrap capacitor is based upon the total gate charge of the high-side power mosfet and the allowable droop in gate drive voltage while the high-side power mosfet is conducting. equation 5-1: for example: q gate = 30 nc ? v droop = 200 mv c boot ?? 0.15 uf a low esr ceramic capacitor is recommend with a maximum voltage rating that exceeds the maximum input voltage, v cc , plus the maximum supply voltage, v supply . it is also recommended that the capacitance of c boot does not exceed 1.2 uf. 5.2 decoupling capacitor proper decoupling of the mcp14700 is highly recommended to help ensure reliable operation. this decoupling capacitor should be placed as close to the mcp14700 as possible. the large currents required to quickly charge the capacitive loads are provided by this capacitor. a low esr ceramic capacitor is recommended. 5.3 power dissipation the power dissipated in the mcp14700 consists of the power loss associated with the quiescent power and the gate charge power. the quiescent power loss can be calculated by the following equation and is typically negligible compared to the gate drive power loss. equation 5-2: the main power loss occurs from the gate charge power loss. this power loss can be defined in terms of both the high-side and low-side power mosfets. equation 5-3: c boot q gate v ? droop ---------------------------- - ? where: c boot = bootstrap capacitor value q gate = total gate charge of the high-side mosfet ? v droo = allowable gate drive voltage droop p q i vcc v cc ? = where: p q = quiescent power loss i vcc = no load bias current v cc = bias voltage p gate p highdr p lowdr + = p highdr v cc q high ? f sw ? = p lowdr v cc q low ? f sw ? = where: p gate = total gate charge power loss p highdr = high-side gate charge power loss p lowdr = low-side gate charge power loss v cc = bias supply voltage q high = high-side mosfet total gate charge q low = low-side mosfet total gate charge f sw = switching frequency
mcp14700 ds22201b-page 14 ? 2009-2013 microchip technology inc. 5.4 pcb layout proper pcb layout is important in a high current, fast switching circuit to provide proper device operation. improper component placement may cause errant switching, excessive voltage ringing, or circuit latch-up. there are two important states of the mcp14700 outputs, high and low. figure 5-1 depicts the current flow paths when the outputs of the mcp14700 are high and the power mosfets are turned on. the charge needed to turn on the low-side power mosfet comes from the decoupling capacitor c vcc . the current flows from this capacitor through the internal lowdr circuitry, into the gate of the low-side power mosfet, out the source, into the ground plane, and back to c vcc . to reduce any excess voltage ringing or spiking, the inductance and area of this current loop must be minimized. figure 5-1: turn on current paths. the charge needed to turn on the high-side power mosfet comes from the bootstrap capacitor c boot . current flows from c boot through the internal highdr circuitry, into the gate of the high-side power mosfet, out the source and back to c boot . the printed circuit board traces that construct this current loop need to have a small area and low inductance. to control the inductance, short and wide traces must be used. figure 5-2 depicts the current flow paths when the outputs of the mcp14700 are low and the power mosfets are turned off. these current paths should also have low inductance and a small loop area to minimize the voltage ringing and spiking. figure 5-2: turn off current paths. the following recommendations should be followed for optimal circuit performance: - the components that construct the high current paths previously mentioned should be placed close the mcp14700 device. the traces used to construct these current loops should be wide and short to keep the inductance and impedance low. - a ground plane should be used to keep both the parasitic inductance and impedance minimized. the mcp14700 device is capable of sourcing and sinking high peaks current and any extra parasitic inductance or impedance will result in non-optimal performance. v cc pwm hi c vcc c boot v supply mcp14700 pwm lo v cc pwm hi c vcc c boot v supply mcp14700 pwm lo
? 2009-2013 microchip technology inc. ds22201b-page 15 mcp14700 6.0 packaging information 6.1 package marking information legend: xx...x customer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week ?01?) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e 8-lead soic (150 mil) example : xxxxxxxx xxxxyyww nnn 14700 e sn 0933 256 3 e 8-lead dfn (3x3) example: xxxx yyww nnn dabr 0933 256 device code mcp14700 dabr note: applies to 8-lead 3x3 dfn
mcp14700 ds22201b-page 16 ? 2009-2013 microchip technology inc. note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
? 2009-2013 microchip technology inc. ds22201b-page 17 mcp14700 note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
mcp14700 ds22201b-page 18 ? 2009-2013 microchip technology inc. note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
? 2009-2013 microchip technology inc. ds22201b-page 19 mcp14700 note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
mcp14700 ds22201b-page 20 ? 2009-2013 microchip technology inc. note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
? 2009-2013 microchip technology inc. ds22201b-page 21 mcp14700
mcp14700 ds22201b-page 22 ? 2009-2013 microchip technology inc. notes:
? 2009-2013 microchip technology inc. ds22201b-page 23 mcp14700 appendix a: revision history revision b (january 2013) the following is the list of modifications: 1. updated the features: list on page 1. 2. updated the typical application schematic. revision a (september 2009) ? original release of this document.
mcp14700 ds22201b-page 24 ? 2009-2013 microchip technology inc. notes:
? 2009-2013 microchip technology inc. ds22201b-page 25 mcp14700 product identification system to order or obtain information, e. g., on pricing or delivery, refer to the factory or the listed sales office . part no. x /xx package temperature range device device: mcp14700: dual input synchronous mosfet driver mcp14700t: dual input synchronous mosfet driver - tape and reel (dfn and soic) temperature range: e= -40 ? c to +125 ? c (extended) package: mf = plastic dual flat, no lead (3x3 dfn), 8-lead sn = plastic small outline, (3.90 mm), 8-lead examples: a) mcp14700-e/mf: extended temperature, 8ld dfn package. b) mcp14700t-e/mf: tape and reel, extended temperature, 8ld dfn package. a) mcp14700-e/sn: extended temperature, 8ld soic package. b) mcp14700t-e/sn: tape and reel, extended temperature, 8ld soic package.
mcp14700 ds22201b-page 26 ? 2009-2013 microchip technology inc. notes:
? 2009-2013 microchip technology inc. ds22201b-page 27 information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safety applications is entirely at the buyer?s risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting from such use. no licenses are conveyed, implicitly or otherwise, under any microchip intellectual property rights. trademarks the microchip name and logo, the microchip logo, dspic, flashflex, k ee l oq , k ee l oq logo, mplab, pic, picmicro, picstart, pic 32 logo, rfpic, sst, sst logo, superflash and uni/o are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. filterlab, hampshire, hi-tech c, linear active thermistor, mtp, seeval and the embedded control solutions company are registered trademarks of microchip technology incorporated in the u.s.a. silicon storage technology is a registered trademark of microchip technology inc. in other countries. analog-for-the-digital age, app lication maestro, bodycom, chipkit, chipkit logo, codeguard, dspicdem, dspicdem.net, dspicworks, dsspeak, ecan, economonitor, fansense, hi-tide, in-circuit serial programming, icsp, mindi, miwi, mpasm, mpf, mplab certified logo, mplib, mplink, mtouch, omniscient code generation, picc, picc-18, picdem, picdem.net, pickit, pictail, real ice, rflab, select mode, sqi, serial quad i/o, total endurance, tsharc, uniwindriver, wiperlock, zena and z-scale are trademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of microchip technology incorporated in the u.s.a. gestic and ulpp are registered trademarks of microchip technology germany ii gmbh & co. & kg, a subsidiary of microchip technology inc., in other countries. all other trademarks mentioned herein are property of their respective companies. ? 2009-2013, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. isbn: 9781620769782 note the following details of the code protection feature on microchip devices: ? microchip products meet the specification cont ained in their particular microchip data sheet. ? microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions. ? there are dishonest and possibly illegal methods used to breach the code protection feature. all of these methods, to our knowledge, require using the microchip produc ts in a manner outside the operating specif ications contained in microchip?s data sheets. most likely, the person doing so is engaged in theft of intellectual property. ? microchip is willing to work with the customer who is concerned about the integrity of their code. ? neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are co mmitted to continuously improvin g the code protection features of our products. attempts to break microchip?s code protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the company?s quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperipherals, nonvolatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001:2000 certified. quality management s ystem certified by dnv == iso/ts 16949 ==
ds22201b-page 28 ? 2009-2013 microchip technology inc. americas corporate office 2355 west chandler blvd. chandler, az 85224-6199 tel: 480-792-7200 fax: 480-792-7277 technical support: http://www.microchip.com/ support web address: www.microchip.com atlanta duluth, ga tel: 678-957-9614 fax: 678-957-1455 boston westborough, ma tel: 774-760-0087 fax: 774-760-0088 chicago itasca, il tel: 630-285-0071 fax: 630-285-0075 cleveland independence, oh tel: 216-447-0464 fax: 216-447-0643 dallas addison, tx tel: 972-818-7423 fax: 972-818-2924 detroit farmington hills, mi tel: 248-538-2250 fax: 248-538-2260 indianapolis noblesville, in tel: 317-773-8323 fax: 317-773-5453 los angeles mission viejo, ca tel: 949-462-9523 fax: 949-462-9608 santa clara santa clara, ca tel: 408-961-6444 fax: 408-961-6445 toronto mississauga, ontario, canada tel: 905-673-0699 fax: 905-673-6509 asia/pacific asia pacific office suites 3707-14, 37th floor tower 6, the gateway harbour city, kowloon hong kong tel: 852-2401-1200 fax: 852-2401-3431 australia - sydney tel: 61-2-9868-6733 fax: 61-2-9868-6755 china - beijing tel: 86-10-8569-7000 fax: 86-10-8528-2104 china - chengdu tel: 86-28-8665-5511 fax: 86-28-8665-7889 china - chongqing tel: 86-23-8980-9588 fax: 86-23-8980-9500 china - hangzhou tel: 86-571-2819-3187 fax: 86-571-2819-3189 china - hong kong sar tel: 852-2943-5100 fax: 852-2401-3431 china - nanjing tel: 86-25-8473-2460 fax: 86-25-8473-2470 china - qingdao tel: 86-532-8502-7355 fax: 86-532-8502-7205 china - shanghai tel: 86-21-5407-5533 fax: 86-21-5407-5066 china - shenyang tel: 86-24-2334-2829 fax: 86-24-2334-2393 china - shenzhen tel: 86-755-8864-2200 fax: 86-755-8203-1760 china - wuhan tel: 86-27-5980-5300 fax: 86-27-5980-5118 china - xian tel: 86-29-8833-7252 fax: 86-29-8833-7256 china - xiamen tel: 86-592-2388138 fax: 86-592-2388130 china - zhuhai tel: 86-756-3210040 fax: 86-756-3210049 asia/pacific india - bangalore tel: 91-80-3090-4444 fax: 91-80-3090-4123 india - new delhi tel: 91-11-4160-8631 fax: 91-11-4160-8632 india - pune tel: 91-20-2566-1512 fax: 91-20-2566-1513 japan - osaka tel: 81-6-6152-7160 fax: 81-6-6152-9310 japan - tokyo tel: 81-3-6880- 3770 fax: 81-3-6880-3771 korea - daegu tel: 82-53-744-4301 fax: 82-53-744-4302 korea - seoul tel: 82-2-554-7200 fax: 82-2-558-5932 or 82-2-558-5934 malaysia - kuala lumpur tel: 60-3-6201-9857 fax: 60-3-6201-9859 malaysia - penang tel: 60-4-227-8870 fax: 60-4-227-4068 philippines - manila tel: 63-2-634-9065 fax: 63-2-634-9069 singapore tel: 65-6334-8870 fax: 65-6334-8850 taiwan - hsin chu tel: 886-3-5778-366 fax: 886-3-5770-955 taiwan - kaohsiung tel: 886-7-213-7828 fax: 886-7-330-9305 taiwan - taipei tel: 886-2-2508-8600 fax: 886-2-2508-0102 thailand - bangkok tel: 66-2-694-1351 fax: 66-2-694-1350 europe austria - wels tel: 43-7242-2244-39 fax: 43-7242-2244-393 denmark - copenhagen tel: 45-4450-2828 fax: 45-4485-2829 france - paris tel: 33-1-69-53-63-20 fax: 33-1-69-30-90-79 germany - munich tel: 49-89-627-144-0 fax: 49-89-627-144-44 italy - milan tel: 39-0331-742611 fax: 39-0331-466781 netherlands - drunen tel: 31-416-690399 fax: 31-416-690340 spain - madrid tel: 34-91-708-08-90 fax: 34-91-708-08-91 uk - wokingham tel: 44-118-921-5869 fax: 44-118-921-5820 worldwide sales and service 11/29/12

▲Up To Search▲

Price & Availability of MCP1470013

	To Download MCP1470013 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .